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IRFP4227PBF Datasheet(PDF) 6 Page - International Rectifier |
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IRFP4227PBF Datasheet(HTML) 6 Page - International Rectifier |
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6 / 8 page  IRFP4227PbF 6 www.irf.com Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * + - + + + - - - RG VDD • di/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Inductor Current Fig 19b. Unclamped Inductive Waveforms Fig 19a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01 Ω tp D.U.T L VDS + - VDD DRIVER A 15V 20V VGS Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr 1K VCC DUT 0 L |
Número de pieza similar - IRFP4227PBF |
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Descripción similar - IRFP4227PBF |
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