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KIC7S32FU Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KIC7S32FU Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
1 / 3 page 2008 .9. 17 1/3 SEMICONDUCTOR TECHNICAL DATA KIC7S32FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT Revision No : 2 2-INPUT OR GATE The KIC7S32FU is a high speed C 2MOS 2-INPUT OR GATE fabricated with silicon gate C 2MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C 2MOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES ・High Speed : t pd=7ns(Typ.) at VCC=5V. ・Low Power Dissipation : I CC=1μ A(Max.) at Ta=25℃. ・High Noise Immunity : V NIH=VNIL=28% VCC(Min.). ・Output Drive Capability : 5 LSTTL Loads. ・Symmetrical Output Impedance : | I OH | =IOL=2mA(Min.) ・Balanced Propagation Delays : t pLH≒tpHL ・Wide Operating Voltage Range : V CC(opr)=2~6V. DIM MILLIMETERS A B D G USV 2.00 0.20 1.25 0.1 2.1 0.1 0.2+0.10/-0.05 0-0.1 0.9 0.1 0.65 0.15+0.1/-0.05 B1 H C T G 1 3 2 B B1 D T 5 4 1.3 0.1 A1 +_ +_ +_ +_ +_ MAXIMUM RATINGS (Ta=25℃) MARKING Type Name Lot No. SV PIN CONNECTION (TOP VIEW) 1 2 3 4 5VCC OUT Y IN B IN A GND CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Range VCC -0.5~7 V DC Input Voltage VIN -0.5~VCC+0.5 V DC Output Voltage VOUT -0.5~VCC+0.5 V Input Diode Current IIK ±20 mA Output Diode Current IOK ±20 mA DC Output Current IOUT ±12.5 mA DC VCC/Ground Current ICC ±25 mA Power Dissipation PD 200 mW Storage Temperature Tstg -65~150 ℃ Lead Temperature (10s) TL 260 ℃ |
Número de pieza similar - KIC7S32FU_15 |
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