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TIP125 Datasheet(PDF) 5 Page - ON Semiconductor

No. de pieza TIP125
Descripción Electrónicos  Plastic Medium-Power Complementary Silicon Transistors
Download  7 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TIP125 Datasheet(HTML) 5 Page - ON Semiconductor

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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
www.onsemi.com
5
20
1.0
Figure 6. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0
5.0
20
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
0.5
TJ = 150°C
dc
1ms
100
ms
0.2
0.1
10
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
5ms
3.0
7.0
30
70
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
500
ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150
°C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
300
0.1
VR, REVERSE VOLTAGE (VOLTS)
30
2.0
5.0
10
20
100
50
0.2
0.5
1.0
100
50
TJ = 25°C
Cib
70
Cob
PNP
NPN
Figure 7. Small−Signal Current Gain
10,000
1.0
f, FREQUENCY (kHz)
10
20
50
100
200
1000
2.0
5.0
10
3000
500
100
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
1000
PNP
NPN
Figure 8. Capacitance
50
500
5000
2000
300
200
30
20
200


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