TIP125G datasheet(2/7 Pages) ONSEMI

No. de pieza	TIP125G

Descripción Electrónicos	Plastic Medium-Power Complementary Silicon Transistors

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

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MAXIMUM RATINGS

Rating

Symbol

TIP120,

TIP125

TIP121,

TIP126

TIP122,

TIP127

Unit

Collector−Emitter Voltage

VCEO

60

80

100

Vdc

Collector−Base Voltage

VCB

60

80

100

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current − Continuous

− Peak

IC

5.0

8.0

Adc

Base Current

IB

120

mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD

65

0.52

W

W/°C

Total Power Dissipation @ TA = 25°C

Derate above 25°C

PD

2.0

0.016

W

W/°C

Unclamped Inductive Load Energy (Note 1)

E

50

mJ

Operating and Storage Junction, Temperature Range

TJ, Tstg

– 65 to + 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.92

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

62.5

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 100 mAdc, IB = 0)

TIP120, TIP125

TIP121, TIP126

TIP122, TIP127

VCEO(sus)

60

80

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP120, TIP125

(VCE = 40 Vdc, IB = 0)

TIP121, TIP126

(VCE = 50 Vdc, IB = 0)

TIP122, TIP127

ICEO

−

0.5

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

TIP120, TIP125

(VCB = 80 Vdc, IE = 0)

TIP121, TIP126

(VCB = 100 Vdc, IE = 0)

TIP122, TIP127

ICBO

−

0.2

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

−

2.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc)

(IC = 3.0 Adc, VCE = 3.0 Vdc)

hFE

1000

−

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 12 mAdc)

(IC = 5.0 Adc, IB = 20 mAdc)

VCE(sat)

−

2.0

4.0

Vdc

Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc)

VBE(on)

−

2.5

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

hfe

4.0

−

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127

TIP120, TIP121, TIP122

Cob

−

300

200

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%

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