BAP70Q

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 2 — 6 March 2012

2 of 13

NXP Semiconductors

BAP70Q

Quad PIN diode attenuator

4.

Marking

5.

Limiting values

[1]

single diode.

6.

Thermal characteristics

7.

Characteristics

Table 3.

Marking

Type number

Marking code

BAP70Q

A2

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

[1]

-50

V

forward current

[1]

-100

mA

total power dissipation

[1]

-125

mW

storage temperature

65

+150

C

junction temperature

65

+150

C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to solder point

350

K/W

Table 6.

Characteristics

Symbol Parameter

Conditions

Min Typ

Max Unit

Per diode

forward voltage

-

0.95

1.1

V

reverse current

-

-

100

nA

diode capacitance

see Figure 1; f = 1 MHz;

-

600

-

fF

-

430

-

fF

-

250

300

fF

diode forward resistance see Figure 2; f = 100 MHz;

-

77

100



-

40

50



-

5.4

7



-

1.4

1.9





L

charge carrier life time

when switched from

-1.25

-

s