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BAS21VD Datasheet(PDF) 5 Page - NXP Semiconductors |
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BAS21VD Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 11 page NXP Semiconductors BAS21VD High-voltage switching diodes BAS21VD All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 1 August 2013 5 / 11 0 50 100 200 VR (V) 300 0 100 200 150 mle167 Tamb (°C) FR4 PCB, standard footprint Fig. 5. Reverse voltage as a function of ambient temperature; derating curve mbg442 0 100 200 Tamb (°C) 300 200 0 100 IF (mA) FR4 PCB, standard footprint Fig. 6. Forward current as a function of ambient temperature; derating curve 11. Test information trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 (1) IR = 3 mA Fig. 7. Reverse recovery time test circuit and waveforms 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. |
Número de pieza similar - BAS21VD_15 |
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Descripción similar - BAS21VD_15 |
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