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BAS29_31_35 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BAS29_31_35 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 9 page 2003 Mar 20 5 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 GRAPHICAL DATA Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. handbook, halfpage 0 100 (1) (2) 200 300 200 0 100 MBG440 Tamb ( oC) IF (mA) Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 02 600 0 200 400 MBH280 1 IF (mA) VF (V) (1) (2) (3) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. handbook, full pagewidth MBH327 10 tp (µs) 1 IFSM (A) 102 10−1 104 102 103 10 1 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj = 25 °C prior to surge. |
Número de pieza similar - BAS29_31_35_15 |
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Descripción similar - BAS29_31_35_15 |
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