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BAS29_31_35 Datasheet(PDF) 5 Page - NXP Semiconductors

No. de pieza BAS29_31_35
Descripción Electrónicos  General purpose controlled avalanche (double) diodes
Download  9 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS29_31_35 Datasheet(HTML) 5 Page - NXP Semiconductors

  BAS29_31_35_15 Datasheet HTML 1Page - NXP Semiconductors BAS29_31_35_15 Datasheet HTML 2Page - NXP Semiconductors BAS29_31_35_15 Datasheet HTML 3Page - NXP Semiconductors BAS29_31_35_15 Datasheet HTML 4Page - NXP Semiconductors BAS29_31_35_15 Datasheet HTML 5Page - NXP Semiconductors BAS29_31_35_15 Datasheet HTML 6Page - NXP Semiconductors BAS29_31_35_15 Datasheet HTML 7Page - NXP Semiconductors BAS29_31_35_15 Datasheet HTML 8Page - NXP Semiconductors BAS29_31_35_15 Datasheet HTML 9Page - NXP Semiconductors  
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background image
2003 Mar 20
5
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
handbook, halfpage
0
100
(1)
(2)
200
300
200
0
100
MBG440
Tamb (
oC)
IF
(mA)
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
02
600
0
200
400
MBH280
1
IF
(mA)
VF (V)
(1)
(2)
(3)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
handbook, full pagewidth
MBH327
10
tp (µs)
1
IFSM
(A)
102
10−1
104
102
103
10
1
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj = 25 °C prior to surge.


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