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IRL6297SDPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRL6297SDPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRL6297SDPbF www.irf.com © 2013 International Rectifier September 5, 2013 2 Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 6.1 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.8 4.9 ––– 5.4 6.9 VGS(th) Gate Threshold Voltage 0.50 0.80 1.10 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -4.1 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 60 ––– ––– S Qg Total Gate Charge ––– 54 ––– Qg Total Gate Charge ––– 27 ––– Qgs1 Pre- Vth Gate-to-Source Charge ––– 2.2 ––– VDS = 10V Qgs2 Post -Vth Gate-to-Source Charge ––– 1.4 ––– VGS = 4.5V Qgd Gate-to-Drain Charge ––– 9.5 ––– ID = 12A Qgodr Gate Charge Overdrive ––– 13.9 ––– See Fig.15 Qsw Switch charge (Qgs2 + Qgd) ––– 10.9 ––– Qoss Output Charge ––– 15 ––– nC RG Gate Resistance ––– 1.8 ––– Ω td(on) Turn-On Delay Time ––– 8.8 ––– tr Rise Time ––– 29 ––– td(off) Turn-Off Delay Time ––– 41 ––– tf Fall Time ––– 41 ––– Ciss Input Capacitance ––– 2245 ––– Coss Output Capacitance ––– 610 ––– Crss Reverse Transfer Capacitance ––– 395 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) g VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 28 42 ns Qrr Reverse Recovery Charge ––– 21 32 nC ns pF A ––– ––– ––– ––– 25 140 µA m Ω nA nC di/dt = 100 A/µs h TJ = 25°C, IS = 12A, VGS = 0V h showing the integral reverse p-n junction diode. VGS = 2.5V, ID = 12A h TJ = 25°C, IF = 12A, VDD = 10V VGS = 0V VDS = 10V ID = 12A VDD = 10V, VGS = 4.5VÃh VDS = VGS, ID = 35µA VDS = 16 V, VGS = 0V VGS = 12V VGS = -12V MOSFET symbol Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 4.5V, ID = 15A h VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 150°C RG = 2.0 Ω VDS = 10V, ID =12A Conditions See Fig.17 ƒ = 1.0MHz VDS = 10V, VGS = 10V, ID = 12A D S G |
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