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IRLB3034PBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRLB3034PBF
Descripción Electrónicos  High Efficiency Synchronous Rectification in SMPS
Download  8 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRLB3034PBF Datasheet(HTML) 2 Page - International Rectifier

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IRLB3034PbF
2
www.irf.com
S
D
G
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ Rθ is measured at TJ approximately 90°C
Notes:
 Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.013mH
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value .
„ ISD ≤ 195A, di/dt ≤ 841A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.04
––– V/°C
–––
1.4
1.7
–––
1.6
2.0
VGS(th)
Gate Threshold Voltage
1.0
–––
2.5
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
RG(int)
Internal Gate Resistance
–––
2.1
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
286
–––
–––
S
Qg
Total Gate Charge
–––
108
162
Qgs
Gate-to-Source Charge
–––
29
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
54
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
54
–––
td(on)
Turn-On Delay Time
–––
65
–––
tr
Rise Time
–––
827
–––
td(off)
Turn-Off Delay Time
–––
97
–––
tf
Fall Time
–––
355
–––
Ciss
Input Capacitance
––– 10315 –––
Coss
Output Capacitance
–––
1980
–––
Crss
Reverse Transfer Capacitance
–––
935
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)iÖ–– 2378 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) h
–––
2986
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
(Body Diode)
ISM
Pulsed Source Current
–––
–––
(Body Diode)
Ãd
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
39
–––
TJ = 25°C
VR = 34V,
–––
41
–––
TJ = 125°C
IF = 195A
Qrr
Reverse Recovery Charge
–––
39
–––
TJ = 25°C
di/dt = 100A/µs
g
–––
46
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.7
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 4.5V, ID = 172A g
mΩ
ID = 195A
RG = 2.1Ω
VGS = 4.5V g
VDD = 26V
ID = 185A, VDS =0V, VGS = 4.5V
Conditions
VDS = 10V, ID = 195A
ID = 185A
RDS(on)
Static Drain-to-Source On-Resistance
pF
A
343™
1372
nC
µA
nA
nC
ns
VDS = VGS, ID = 250µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
ns
VGS = 0V, VDS = 0V to 32V h
MOSFET symbol
TJ = 25°C, IS = 195A, VGS = 0V g
integral reverse
p-n junction diode.
VGS = 20V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 195A g
VGS = -20V
showing the
VDS = 20V
Conditions
VGS = 4.5V g
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V i


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