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IRLB4030PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRLB4030PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLB4030PbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.05mH RG = 25 Ω, IAS = 110A, VGS =10V. Part not recommended for use above this value . ISD ≤ 110A, di/dt ≤ 1330A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. S D G
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniquea refer to applocation note # AN- 994 echniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.4 4.3 m Ω ––– 3.6 4.5 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 2.1 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 320 ––– ––– S Qg Total Gate Charge ––– 87 130 Qgs Gate-to-Source Charge ––– 27 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 45 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 42 ––– td(on) Turn-On Delay Time ––– 74 ––– tr Rise Time ––– 330 ––– td(off) Turn-Off Delay Time ––– 110 ––– tf Fall Time ––– 170 ––– Ciss Input Capacitance ––– 11360 ––– Coss Output Capacitance ––– 670 ––– Crss Reverse Transfer Capacitance ––– 290 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related)h ––– 760 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)g ––– 1140 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 50 ––– TJ = 25°C VR = 85V, ––– 60 ––– TJ = 125°C IF = 110A Qrr Reverse Recovery Charge ––– 88 ––– TJ = 25°C di/dt = 100A/µs f ––– 130 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 3.3 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VDS = 25V, ID = 110A ID = 110A VGS = 16V VGS = -16V MOSFET symbol showing the VDS = 50V Conditions VGS = 4.5V f VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V h VGS = 0V, VDS = 0V to 80V g TJ = 25°C, IS = 110A, VGS = 0V f integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mA VGS = 10V, ID = 110A f VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C ID = 110A RG = 2.7Ω VGS = 4.5V f VDD = 65V ID = 110A, VDS =0V, VGS = 4.5V A ––– ––– ––– ––– VGS = 4.5V, ID = 92A f ns nC 180 730 µA nA nC ns pF |
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