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IRLHS6242PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRLHS6242PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013 IRLHS6242PbF S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Package is limited to 12A by die-source to lead-frame bonding technology. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 ich square copper board.
Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. Calculated continuous current based on maximum allowable junction temperature. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 6.8 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 9.4 11.7 ––– 12.4 15.5 VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 36 ––– ––– S Qg Total Gate Charge h ––– 14 ––– VDS = 10V Qgs Gate-to-Source Charge h ––– 1.5 ––– Qgd Gate-to-Drain Charge h ––– 6.3 ––– RG Gate Resistance ––– 2.1 ––– Ω td(on) Turn-On Delay Time ––– 5.8 ––– tr Rise Time ––– 15 ––– td(off) Turn-Off Delay Time ––– 19 ––– tf Fall Time ––– 13 ––– Ciss Input Capacitance ––– 1110 ––– Coss Output Capacitance ––– 260 ––– Crss Reverse Transfer Capacitance ––– 180 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 15 23 ns Qrr Reverse Recovery Charge ––– 12 18 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance MOSFET symbol nA ns A pF nC VGS = 4.5V VGS = 12V VGS = -12V ––– ––– 88 ––– ––– 22 Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 8.5A ed Conditions See Fig.15 ƒ = 1.0MHz TJ = 25°C, IF = 8.5Ad, VDD = 10V di/dt = 210A/μs eà TJ = 25°C, IS = 8.5Ad, VGS = 0V e showing the integral reverse p-n junction diode. RG=1.8 Ω VDS = 10V, ID = 8.5Ad VDS = 16V, VGS = 0V, TJ = 125°C μA ID = 8.5Ad (See Fig.17 & 18) ID = 8.5A dà VGS = 0V VDS = 10V VDS = 16V, VGS = 0V VDS = VGS, ID = 10μA VGS = 2.5V, ID = 8.5A ed m Ω VDD = 10V, VGS = 4.5V e Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case g ––– 13 RθJC (Top) Junction-to-Case g ––– 94 °C/W RθJA Junction-to-Ambient f ––– 63 RθJA (<10s) Junction-to-Ambient f ––– 46 |
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Descripción similar - IRLHS6242PBF_15 |
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