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74HC_HCT253 Datasheet(PDF) 8 Page - NXP Semiconductors

No. de pieza 74HC_HCT253
Descripción Electrónicos  Dual 4-input multiplexer; 3-state
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
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74HC_HCT253 Datasheet(HTML) 8 Page - NXP Semiconductors

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74HC_HCT253
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 5 — 21 January 2015
8 of 17
NXP Semiconductors
74HC253; 74HCT253
Dual 4-input multiplexer; 3-state
[1]
tpd is the same as tPHL, tPLH.
[2]
ten is the same as tPZH, tPZL.
[3]
tdis is the same as tPHZ, tPLZ.
[4]
tt is the same as tTHL, tTLH.
[5]
CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD  VCC2  fi  N+ (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(C
L  VCC
2
 f
o) = sum of outputs.
CPD
power dissipation
capacitance
per multiplexer;
VI =GND to VCC
[5]
55
-
pF
74HCT253
tpd
propagation delay 1ln to 1Y or 2ln to 2Y;
see Figure 6
[1]
VCC = 4.5 V
20
38
48
57
ns
VCC = 5.0 V; CL = 15 pF
17
-
-
ns
Sn to nY; see Figure 6
VCC = 4.5 V
22
40
50
60
ns
VCC = 5.0 V; CL = 15 pF
19
-
ns
ten
enable time
nOE to nY; VCC = 4.5 V;
see Figure 7
[2]
14
30
38
45
ns
tdis
disable time
nOE to nY; VCC = 4.5 V;
see Figure 7
[3]
13
30
38
45
ns
tt
transition time
VCC = 4.5 V; see Figure 6
512
15
18
ns
CPD
power dissipation
capacitance
per multiplexer;
VI =GND to VCC  1.5 V
[5]
55
-
pF
Table 7.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); For test circuit see Figure 8.
Symbol Parameter
Conditions
25
C
40 C to +85 C 40 C to +125 C Unit
Typ
Max
Max
Max


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