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IRFB3407ZPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFB3407ZPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page 2 www.irf.com © 2013 International Rectifier March 15, 2013 IRFB3407ZPbF S D G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.050mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD ≤ 75A, di/dt ≤ 1570A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.094 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 5.0 6.4 mΩ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V RG(int) Internal Gate Resistance ––– 0.70 ––– Ω IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 320 ––– ––– S Qg Total Gate Charge ––– 79 110 Qgs Gate-to-Source Charge ––– 19 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 24 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 55 ––– td(on) Turn-On Delay Time ––– 15 ––– tr Rise Time ––– 64 ––– td(off) Turn-Off Delay Time ––– 38 ––– tf Fall Time ––– 65 ––– Ciss Input Capacitance ––– 4750 ––– Coss Output Capacitance ––– 420 ––– Crss Reverse Transfer Capacitance ––– 190 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 440 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 410 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 120 (Body Diode) ISM Pulsed Source Current ––– ––– 488 (Body Diode) Ãdi VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C VR = 64V, ––– 39 59 TJ = 125°C IF = 75A Qrr Reverse Recovery Charge ––– 42 63 nC TJ = 25°C di/dt = 100A/μs g ––– 56 84 TJ = 125°C IRRM Reverse Recovery Current ––– 2.2 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ID = 75A RG = 2.6Ω VGS = 10V g VDD = 49V ID = 75A, VDS =0V, VGS = 10V TJ = 25°C, IS = 75A, VGS = 0V g integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5mAd VGS = 10V, ID = 75A g VDS = VGS, ID = 150μA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C MOSFET symbol showing the VDS = 38V Conditions VGS = 10V g VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V i VGS = 0V, VDS = 0V to 60V h Conditions VDS = 50V, ID = 75A ID = 75A VGS = 20V VGS = -20V A ns pF nC |
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