IRFB4019PBF datasheet(3/8 Pages) IRF

No. de pieza	IRFB4019PBF

Descripción Electrónicos	Low QRR for Better THD and Lower EMI

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Fabricante Electrónico	IRF [International Rectifier]

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IRFB4019PbF

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3

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

≤ 60µs PULSE WIDTH

Tj = 25°C

5.0V

VGS

TOP

15V

12V

10V

8.0V

7.0V

6.0V

5.5V

BOTTOM

5.0V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

≤ 60µs PULSE WIDTH

Tj = 175°C

5.0V

VGS

TOP

15V

12V

10V

8.0V

7.0V

6.0V

5.5V

BOTTOM

5.0V

2

4

6

8

10

VGS, Gate-to-Source Voltage (V)

0.1

1.0

10.0

100.0

VDS = 25V

≤ 60µs PULSE WIDTH

TJ = 25°C

TJ = 175°C

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

TJ, Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

3.0

ID = 10A

VGS = 10V

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

0

5

10

15

20

QG Total Gate Charge (nC)

0

4

8

12

16

20

VDS= 120V

VDS= 75V

VDS= 30V

ID= 10A

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