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IRFG9110 Datasheet(PDF) 2 Page - International Rectifier |
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IRFG9110 Datasheet(HTML) 2 Page - International Rectifier |
2 / 7 page IRFG9110 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 17 RthJA Junction to Ambient — — 90 Typical socket mount °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -0.75 ISM Pulse Source Current (Body Diode) ➀ — — -3.0 VSD Diode Forward Voltage — — -5.5 V Tj = 25°C, IS = -0.75A, VGS = 0V ➃ trr Reverse Recovery Time — — 200 nS Tj = 25°C, IF = -0.75A, di/dt ≤-100A/µs QRR Reverse Recovery Charge — — 9.0 µc VDD ≤ -50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.098 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 1.4 VGS = -10V, ID = -0.5A➃ Resistance — — 1.73 VGS = -10V, ID = -0.75A ➃ VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 0.67 — — S ( ) VDS > -15V, IDS = -0.5A➃ IDSS Zero Gate Voltage Drain Current — — -25 VDS= -80V, VGS= 0V — — -250 VDS = -80V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse — — 100 VGS =20V Qg Total Gate Charge — — 15 VGS = -10V, ID= -0.75A Qgs Gate-to-Source Charge — — 7.0 nC VDS = -50V Qgd Gate-to-Drain (‘Miller’) Charge — — 8.0 td(on) Turn-On Delay Time — — 30 VDD = -50V, ID = -0.75A tr Rise Time — — 60 VGS = -10V, RG =7.5Ω td(off) Turn-Off Delay Time — — 40 tf Fall Time — — 40 LS + LD Total Inductance — 10 — Ciss Input Capacitance — 200 VGS = 0V, VDS = -25V Coss Output Capacitance — 85 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 30 — nA nH ns µA Ω Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) Note: Corresponding Spice and Saber models are available on the G&S Website. |
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Descripción similar - IRFG9110 |
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