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BUK6E2R3-40C Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK6E2R3-40C Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 15 page BUK6E2R3-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 18 August 2010 2 of 15 NXP Semiconductors BUK6E2R3-40C N-channel TrenchMOS intermediate level FET [1] Continuous current is limited by package. 2. Pinning information 3. Ordering information Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =120 A; Vsup ≤ 40 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped --1.02 J Dynamic characteristics QGD gate-drain charge ID =25A; VDS =32 V; VGS = 10 V; see Figure 13; see Figure 14 -72 - nC Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate SOT226 (I2PAK) 2D Drain 3S source mb D mounting base; connected to drain 3 2 1 mb S D G mbb076 Table 3. Ordering information Type number Package Name Description Version BUK6E2R3-40C I2PAK plastic single-ended package (I2PAK); TO-262 SOT226 |
Número de pieza similar - BUK6E2R3-40C_15 |
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Descripción similar - BUK6E2R3-40C_15 |
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