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BF1205C Datasheet(PDF) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1205C Datasheet(HTML) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
9 / 22 page BF1205C_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 15 August 2006 9 of 22 Philips Semiconductors BF1205C Dual N-channel dual gate MOS-FET VDS(a) =VDS(b) =5V; VG1-S(b) = 0 V; f = 50 MHz; Tamb =25 °C; see Figure 33. VDS(a) =5V; VG2-S(a) =4V; VDS(b) =VG1-S(b) =0V; ID(a) =19mA. Fig 12. Drain current as a function of gain reduction; typical values. Fig 13. Input admittance as a function of frequency; typical values. 001aaa562 gain reduction (dB) 060 40 20 16 8 24 32 ID (mA) 0 001aaa564 f (MHz) 10 103 102 10−1 1 10 102 bis, gis (mS) 10−2 bis gis VDS(a) =5V; VG2-S(a) =4V; VDS(b) =VG1-S(b) =0V; ID(a) =19mA. VDS(a) =5V; VG2-S(a) =4V; VDS(b) =VG1-S(b) =0V; ID(a) =19mA. Fig 14. Forward transfer admittance and phase as a function of frequency; typical values. Fig 15. Reverse transfer admittance and phase as a function of frequency: typical values. f (MHz) 10 103 102 001aaa565 10 102 yfs (mS) 1 −ϕfs (deg) 10 102 1 yfs −ϕfs 001aaa566 102 10 103 yrs (mS) 1 102 10 103 −ϕrs (deg) 1 f (MHz) 10 103 102 yrs −ϕrs |
Número de pieza similar - BF1205C_15 |
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Descripción similar - BF1205C_15 |
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