Nombre de pieza
         Descripción
2N4123

 NPN Silicon General Purpose Transistor 625mW ( 5 Page)


MCC
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IE= 0)
2N4123
2N4124
V(BR)CEO
30
25
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
2N4123
2N4124
V(BR)CBO
40
30
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC =2.0 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
hFE
50
120
Collector – Emitter Saturation Voltage
(IC = 50mAdc, IB = 5.0 mAdc)
VCE(sat)
0.3
Vdc
Base–Emitter Saturation Voltage
(IC = 50mAdc, IB = 5.0 mAdc)
VBE(sat)
0.95
Vdc
2N4123
2N4124
2N4124
2N4123
60
25



































SMALL-SIGNAL CHARACTERISTICS
   
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MCC
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1  2  3  4  5 



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