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BF1212 Datasheet(PDF) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd.

No. de pieza BF1212
Descripción Electrónicos  N-channel dual-gate MOS-FETs
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Fabricante Electrónico  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Página de inicio  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BF1212 Datasheet(HTML) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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2003 Nov 14
8
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage
0
30
20
10
0
2
(1)
(2)
(3)
(4)
(5)
46
MLE241
VG2-S (V)
IG1
(
µA)
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values.
VDS = 5 V; Tj =25 °C.
RG1 = 150 kΩ
(connected to VGG);
see Fig.21.
(1) VGG =5V.
(2) VGG =4.5 V.
(3) VGG =4V.
(4) VGG =3.5 V.
(5) VGG =3V.
handbook, halfpage
012
4
VAGC (V)
gain
reduction
(dB)
0
−60
−40
−20
3
MLE242
Fig.14 Typical gain reduction as a function of AGC
voltage.
VDS = 5 V; VGG = 5 V; RG1 = 150 kΩ (connected to VGG);
see Fig.21; f = 50 MHz; Tamb =25 °C.
handbook, halfpage
010
50
120
110
90
80
100
20
gain reduction (dB)
Vunw
(dB
µV)
30
40
MLE243
Fig.15 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values.
VDS = 5 V; VGG = 5 V; RG1 = 150 kΩ (connected to VGG);
see Fig.21; f= 50 MHz; funw = 60 MHz; Tamb =25 °C.
handbook, halfpage
010
50
16
12
4
0
8
20
gain reduction (dB)
ID
(mA)
30
40
MLE244
Fig.16 Drain current as a function of gain
reduction; typical values.
VDS = 5 V; VGG = 5 V; RG1 = 150 kΩ (connected to VGG);
see Fig.21; f= 50 MHz; Tamb =25 °C.


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