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CSD87350Q5D Datasheet(PDF) 11 Page - Texas Instruments |
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CSD87350Q5D Datasheet(HTML) 11 Page - Texas Instruments |
11 / 23 page Output Current (A) 0 5 10 15 20 25 30 35 40 45 72 75 78 81 84 87 90 93 96 D029 VGS = 5 V VIN = 12 V VOUT = 1.3 V LOUT = 0.3 PH fSW = 500 kHz TA = 25qC Power Block HS/LS RDS(on) = 5 m: / 2.1 m: Discrete HS/LS RDS(on) = 5 m: / 2.1 m: Discrete HS/LS RDS(on) = 5 m: / 1.2 m: Output Current (A) 0 5 10 15 20 25 30 35 40 45 0 1 2 3 4 5 6 7 8 9 10 11 D030 VGS = 5 V VIN = 12 V VOUT = 1.3 V LOUT = 0.3 PH fSW = 500 kHz TA = 25qC Power Block HS/LS RDS(on) = 5 m: / 2.1 m: Discrete HS/LS RDS(on) = 5 m: / 2.1 m: Discrete HS/LS RDS(on) = 5 m: / 1.2 m: PWM Driver Driver Switch Node Co Load RPCB CESR CINPUT CESL LDRAIN LDRAIN LSOURCE LSOURCE Control FET Sync FET Lo IL Input Supply CTOTAL CSD87350Q5D www.ti.com SLPS288D – MARCH 2011 – REVISED SEPTEMBER 2014 Application Information (continued) Figure 29. The combination of TI’s latest generation silicon and optimized packaging technology has created a benchmarking solution that outperforms industry standard MOSFET chipsets of similar RDS(ON) and MOSFET chipsets with lower RDS(ON). Figure 30 and Figure 31 compare the efficiency and power loss performance of the CSD87350Q5D versus industry standard MOSFET chipsets commonly used in this type of application. This comparison purely focuses on the efficiency and generated loss of the power semiconductors only. The performance of CSD87350Q5D clearly highlights the importance of considering the Effective AC On-Impedance (ZDS(ON)) during the MOSFET selection process of any new design. Simply normalizing to traditional MOSFET RDS(ON) specifications is not an indicator of the actual in-circuit performance when using TI’s Power Block technology. Figure 30. Efficiency Figure 31. Power Loss Copyright © 2011–2014, Texas Instruments Incorporated Submit Documentation Feedback 11 |
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Descripción similar - CSD87350Q5D_15 |
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