CSD87350Q5D_15 datasheet(11/23 Pages) TI

No. de pieza	CSD87350Q5D

Descripción Electrónicos	CSD87350Q5D Synchronous Buck NexFET??Power Block

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Fabricante Electrónico	TI [Texas Instruments]

Página de inicio	http://www.ti.com

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11 / 23 page

Output Current (A)

0

5

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45

72

75

78

81

84

87

90

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96

D029

VGS = 5 V

VIN = 12 V

VOUT = 1.3 V

LOUT = 0.3 PH

fSW = 500 kHz

TA = 25qC

Power Block HS/LS RDS(on) = 5 m: / 2.1 m:

Discrete HS/LS RDS(on) = 5 m: / 2.1 m:

Discrete HS/LS RDS(on) = 5 m: / 1.2 m:

Output Current (A)

0

5

10

15

20

25

30

35

40

45

0

1

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11

D030

VGS = 5 V

VIN = 12 V

VOUT = 1.3 V

LOUT = 0.3 PH

fSW = 500 kHz

TA = 25qC

Power Block HS/LS RDS(on) = 5 m: / 2.1 m:

Discrete HS/LS RDS(on) = 5 m: / 2.1 m:

Discrete HS/LS RDS(on) = 5 m: / 1.2 m:

PWM

Driver

Switch

Node

Co

Load

RPCB

CESR

CINPUT

CESL

LDRAIN

LSOURCE

Control

FET

Sync

FET

Lo

IL

Input

Supply

CTOTAL

CSD87350Q5D

www.ti.com

SLPS288D – MARCH 2011 – REVISED SEPTEMBER 2014

Application Information (continued)

Figure 29.

The combination of TI’s latest generation silicon and optimized packaging technology has created a

benchmarking solution that outperforms industry standard MOSFET chipsets of similar RDS(ON) and MOSFET

chipsets with lower RDS(ON). Figure 30 and Figure 31 compare the efficiency and power loss performance of the

CSD87350Q5D versus industry standard MOSFET chipsets commonly used in this type of application. This

comparison purely focuses on the efficiency and generated loss of the power semiconductors only. The

performance of CSD87350Q5D clearly highlights the importance of considering the Effective AC On-Impedance

(ZDS(ON)) during the MOSFET selection process of any new design. Simply normalizing to traditional MOSFET

RDS(ON) specifications is not an indicator of the actual in-circuit performance when using TI’s Power Block

technology.

Figure 30. Efficiency

Figure 31. Power Loss

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