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CSD97395Q4M Datasheet(PDF) 4 Page - Texas Instruments

No. de pieza CSD97395Q4M
Descripción Electrónicos  CSD97395Q4M Synchronous Buck NexFET??Power Stage
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Fabricante Electrónico  TI [Texas Instruments]
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CSD97395Q4M Datasheet(HTML) 4 Page - Texas Instruments

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CSD97395Q4M
SLPS541A – DECEMBER 2014 – REVISED MARCH 2015
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise noted)
(1)
MIN
MAX
UNIT
VIN to PGND
–0.3
30
V
VSW to PGND , VIN to VSW
–0.3
30
V
VSW to PGND, VIN to VSW (<10 ns)
–7
33
V
VDD to PGND
–0.3
6
V
PWM, SKIP# to PGND
–0.3
6
V
BOOT to PGND
–0.3
35
V
BOOT to PGND (<10 ns)
–2
38
V
BOOT to BOOT_R
–0.3
6
V
BOOT to BOOT_R (duty cycle <0.2%)
8
V
PD
Power Dissipation
8
W
TJ
Operating Temperature
–40
150
°C
Tstg
Storage temperature range
–55
150
°C
(1)
Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to Absolute Maximum rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
Human Body Model (HBM)(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged Device Model (CDM)(2)
±500
(1)
JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
TA = 25°C (unless otherwise noted)
MIN
MAX
UNIT
VDD
Gate Drive Voltage
4.5
5.5
V
VIN
Input Supply Voltage (1)
24
V
IOUT
Continuous Output Current
VIN = 12 V, VDD = 5 V, VOUT = 1.8 V,
25
A
ƒSW = 500 kHz, LOUT = 0.29 µH
(2)
IOUT-PK
Peak Output Current(3)
60
A
ƒSW
Switching Frequency
CBST = 0.1 µF (min)
2000
kHz
On-Time Duty Cycle
85%
Minimum PWM On-Time
40
ns
Operating Temperature
–40
125
°C
(1)
Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For
reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
(2)
Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
(3)
System conditions as defined in Note 2. Peak Output Current is applied for tp = 10 ms, duty cycle ≤1%
6.4 Thermal Information
TA = 25°C (unless otherwise noted)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-Case Thermal Resistance (Top of package)(1)
22.8
°C/W
RθJB
Junction-to-Board Thermal Resistance(2)
2.5
(1)
RθJC is determined with the device mounted on a 1 inch² (6.45 cm²), 2 oz (0.071 mm thick) Cu pad on a 1.5 inch x 1.5 inch, 0.06 inch
(1.52 mm) thick FR4 board.
(2)
RθJB value based on hottest board temperature within 1 mm of the package.
4
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