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BUK753R1-40E Datasheet(PDF) 5 Page - NXP Semiconductors

No. de pieza BUK753R1-40E
Descripción Electrónicos  N-channel TrenchMOS standard level FET
Download  13 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK753R1-40E Datasheet(HTML) 5 Page - NXP Semiconductors

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NXP Semiconductors
BUK753R1-40E
N-channel TrenchMOS standard level FET
BUK753R1-40E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 September 2012
5 / 13
003aah198
single shot
0.2
0.1
0.05
10-3
10-2
10-1
1
10-6
10-5
10-4
10-3
10-2
10-1
1
tp(s)
Zth(j-mb)
(K/W)
δ = 0.5
0.02
tp
T
P
t
tp
T
δ =
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C
40
-
-
V
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
36
-
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 9; Fig. 10
2.4
3
4
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
-
-
4.5
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
1
-
-
V
VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
0.2
2
µA
IDSS
drain leakage current
VDS = 40 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
IGSS
gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
-
2.6
3.1
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 11
-
-
5.9
Dynamic characteristics
QG(tot)
total gate charge
-
79
-
nC
QGS
gate-source charge
-
20
-
nC
QGD
gate-drain charge
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
-
22
-
nC


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