Nombre de pieza
         Descripción
MJ413

 10 Amp NPN Silicon Power Transistors 125W ( 2 Page)


MCC
100% 
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 2 page
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Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(1)
(IC=100mA, IB=0)
VCEO(sus)
325
---
Vdc
Collector Cutoff Current
(VCE=400V, VEB(off)=1.5V)
MJ413 MJ423
MJ431
(VCE=400V, VEB(off)=1.5V,
MJ413 MJ423
TC=125
:)
MJ431
ICEX
0.25
2.5
0.5
5.0
mAdc
Emitter Cutoff Current
(VBE=5.0Vdc, IC=0)
MJ413 MJ423
MJ431
IEBO
5.0
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC=0.5A, VCE=5.0V)
MJ413
(IC=1.0A, VCE=5.0V)
(IC=1.0A, VCE=5.0V)
MJ423
(IC=2.5A, VCE=5.0V)
(IC=2.5A, VCE=5.0V)
MJ431
(IC=3.0A, VCE=5.0V)
hFE
20
15
30
10
15
10
80
90
35
Collector-Emitter Saturation Voltage
(IC=0.5A, IB=0.05A)
MJ413
(IC=1.0A, IB=0.1A)
MJ423
(IC=2.5A, IB=0.5A)
MJ431
VCE(sat)
0.6
0.8
0.7
Vdc
Base-Emitter Saturation Voltage
(IC=0.5A, IB=0.05A)
MJ413
(IC=1.0A, IB=0.1A)
MJ423
(IC=2.5A, IB=0.5A)
MJ431
VBE(sat)
1.25
1.25
1.50
Vdc
DYNAMIC CHARACTERISTICS
Current Gain – Bandwidth Product
(IC=200mA, VCE=10V, f=1.0MHz)
fT
2.5
MHz
(1) Pulse Test: Pulse Width
 V 'XW\ &\FOH2.0%
www.mccsemi.com
MCC
MJ413, MJ423 & MJ431
1  2 



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