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BUK653R3-30C Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK653R3-30C Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK653R3-30C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 13 July 2011 6 of 14 NXP Semiconductors BUK653R3-30C N-channel TrenchMOS intermediate level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =250 µA; VGS =0V; Tj = 25 °C 30 --V ID =250 µA; VGS =0V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 9; see Figure 10 1.8 2.3 2.8 V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10 --3.3 V ID =2.5 mA; VDS =VGS; Tj = 175 °C; see Figure 10 0.8 --V IDSS drain leakage current VDS =30V; VGS =0V; Tj = 25 °C - 0.02 1 µA VDS =30V; VGS =0V; Tj = 175 °C - - 500 µA IGSS gate leakage current VGS =20V; VDS =0V; Tj = 25 °C - 2 100 nA VGS =-20 V; VDS =0V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =25°C; see Figure 11; see Figure 12 - 2.72 3.3 m Ω VGS =4.5 V; ID =25A; Tj =25°C; see Figure 11; see Figure 12 -3.9 5.3 m Ω VGS =5V; ID =25A; Tj =25 °C; see Figure 11 - 3.45 4.4 m Ω VGS =10V; ID =25A; Tj = 175 °C; see Figure 11 - 5.75 6.3 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =24V; VGS =10V; see Figure 13; see Figure 14 -114 -nC ID =25A; VDS =24V; VGS =5V; see Figure 13; see Figure 14 -66 -nC QGS gate-source charge ID =25A; VDS =24V; VGS =10V; see Figure 13; see Figure 14 -18 -nC QGD gate-drain charge - 33.3 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 15 - 5216 6960 pF Coss output capacitance - 896 1100 pF Crss reverse transfer capacitance - 537 740 pF td(on) turn-on delay time VDS =25V; RL =1 Ω; VGS =10V; RG(ext) =10 Ω -22 -ns tr rise time - 59 - ns td(off) turn-off delay time - 209 - ns tf fall time -113 -ns LD internal drain inductance from drain lead 6 mm from package to centre of die; Tj =25°C -4.5 -nH LS internal source inductance from source lead to source bond pad; Tj =25°C -7.5 -nH |
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Descripción similar - BUK653R3-30C_15 |
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