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BU931L-T3P-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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BU931L-T3P-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page BU931 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R214-012,E ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage (VBE=0) VCES 500 V Collector-Emitter Voltage (IB=0) VCEO 400 V Emitter-Base Voltage (IC=0) VEBO 5 V Collector Current IC 15 A Collector Peak Current ICM 30 A Base Current IB 1 A Base Peak Current IBM 5 A Power Dissipation (TC=25°C) TO-3P PD 135 W TO-263 125 W Junction Temperature TJ +200 °C Storage Temperature TSTG -65 ~ +200 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Case TO-3P θJC 1.1 °C/W TO-263 1.2 °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-off Current (IB=0) ICEO VCE = 450 V 100 μA VCE =450V, TJ =125°C 0.5 mA Emitter Cut-off Current (IC=0) IEBO VEB = 5V 20 mA Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC = 7A, IB =70mA 1.6 V IC = 8A, IB =100mA 1.8 V IC = 10A, IB =250mA 1.8 V Base-Emitter Saturation Voltage (Note) VBE(SAT) IC = 7A, IB =70mA 2.2 V IC = 8A, IB =100mA 2.4 V IC = 10A, IB =250mA 2.5 V DC Current Gain hFE IC = 5A, VCE =10V 300 Diode Forward Voltage VF IF = 10 A 2.5 V Functional Test VCC =24V, Vclamp =400V L=7mH 8 A Inductive Load Storage Time / Fall Time tS tF VCC = 12V, Vclamp =300V L=7mH IC =7A, IB =70mA VBE =0, RBE =47Ω 15 0.5 μs μs Note: Pulsed: Pulse duration = 300μs, duty cycle 1.5 % |
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