BUK6213-30C

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Product data sheet

Rev. 01 — 4 October 2010

4 of 14

NXP Semiconductors

BUK6213-30C

N-channel TrenchMOS intermediate level FET

Fig 1.

Continuous drain current as a function of

mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aae913

0

10

20

30

40

50

0

50

100

150

200

(A)

0

200

150

50

100

03na19

40

80

120

(%)

0

003aae914

10

-1

1

10

10

2

10

3

10

-1

1

10

10

2

V

I

D

(A)

Limit R

DC

100

μs

10 ms

t

100 ms

1 ms