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BUK764R0-75C Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK764R0-75C Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 13 page 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits AEC-Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment due to 175 °C rating 1.3 Applications 12 V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation (PWM) applications 1.4 Quick reference data BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 75 V ID drain current VGS =10V; Tmb =25°C; see Figure 1; see Figure 4 [1][2] - - 100 A Ptot total power dissipation Tmb =25°C; see Figure 2 - - 333 W |
Número de pieza similar - BUK764R0-75C_15 |
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Descripción similar - BUK764R0-75C_15 |
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