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BUK763R4-30B Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK763R4-30B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK763R4-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 21 April 2011 6 of 14 NXP Semiconductors BUK763R4-30B N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =250 µA; VGS =0V; Tj = 25 °C 30 --V ID =250 µA; VGS =0V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C; see Figure 10; see Figure 11 234V VGSth gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10; see Figure 11 --4.4 V ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 10; see Figure 11 1 --V IDSS drain leakage current VDS =30V; VGS =0V; Tj = 25 °C - 0.05 10 µA IGSS gate leakage current VGS =20V; VDS =0V; Tj = 25 °C - 2 100 nA VGS =-20 V; VDS =0V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj = 175 °C; see Figure 12; see Figure 13 --6.5 m Ω VGS =10V; ID =25A; Tj =25°C; see Figure 12; see Figure 13 -2.9 3.4 m Ω IDSS drain leakage current VDS =30V; VGS =0V; Tj = 175 °C - - 500 µA Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =24V; VGS =10V; see Figure 14 -75 - nC QGS gate-source charge - 19 - nC QGD gate-drain charge - 23 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 15 - 3713 4951 pF Coss output capacitance - 1249 1499 pF Crss reverse transfer capacitance - 460 630 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω -32 - ns tr rise time - 64 - ns td(off) turn-off delay time - 89 - ns tf fall time - 71 - ns LD internal drain inductance from contact screw on mounting base to centre of die -3.5 -nH from upper edge of drain mounting base to centre of die -2.5 -nH from drain lead 6 mm from package to centre of die -4.5 -nH LS internal source inductance from source lead to source bonding pad -7.5 -nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C; see Figure 16 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =0V; VDS =30V -70 - ns Qr recovered charge - 58 - nC |
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