Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

BUK763R4-30B Datasheet(PDF) 6 Page - NXP Semiconductors

No. de pieza BUK763R4-30B
Descripción Electrónicos  N-channel TrenchMOS standard level FET
Download  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK763R4-30B Datasheet(HTML) 6 Page - NXP Semiconductors

Back Button BUK763R4-30B_15 Datasheet HTML 2Page - NXP Semiconductors BUK763R4-30B_15 Datasheet HTML 3Page - NXP Semiconductors BUK763R4-30B_15 Datasheet HTML 4Page - NXP Semiconductors BUK763R4-30B_15 Datasheet HTML 5Page - NXP Semiconductors BUK763R4-30B_15 Datasheet HTML 6Page - NXP Semiconductors BUK763R4-30B_15 Datasheet HTML 7Page - NXP Semiconductors BUK763R4-30B_15 Datasheet HTML 8Page - NXP Semiconductors BUK763R4-30B_15 Datasheet HTML 9Page - NXP Semiconductors BUK763R4-30B_15 Datasheet HTML 10Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 6 / 14 page
background image
BUK763R4-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 21 April 2011
6 of 14
NXP Semiconductors
BUK763R4-30B
N-channel TrenchMOS standard level FET
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID =250 µA; VGS =0V; Tj = 25 °C
30
--V
ID =250 µA; VGS =0V; Tj = -55 °C
27
-
-
V
VGS(th)
gate-source threshold
voltage
ID =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V
VGSth
gate-source threshold
voltage
ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10; see Figure 11
--4.4
V
ID =1mA; VDS =VGS; Tj = 175 °C;
see Figure 10; see Figure 11
1
--V
IDSS
drain leakage current
VDS =30V; VGS =0V; Tj = 25 °C
-
0.05
10
µA
IGSS
gate leakage current
VGS =20V; VDS =0V; Tj = 25 °C
-
2
100
nA
VGS =-20 V; VDS =0V; Tj = 25 °C
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A; Tj = 175 °C;
see Figure 12; see Figure 13
--6.5
m
VGS =10V; ID =25A; Tj =25°C;
see Figure 12; see Figure 13
-2.9
3.4
m
IDSS
drain leakage current
VDS =30V; VGS =0V; Tj = 175 °C
-
-
500
µA
Dynamic characteristics
QG(tot)
total gate charge
ID =25A; VDS =24V; VGS =10V;
see Figure 14
-75
-
nC
QGS
gate-source charge
-
19
-
nC
QGD
gate-drain charge
-
23
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V; f=1MHz;
Tj =25°C; see Figure 15
-
3713
4951
pF
Coss
output capacitance
-
1249
1499
pF
Crss
reverse transfer
capacitance
-
460
630
pF
td(on)
turn-on delay time
VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =10 Ω
-32
-
ns
tr
rise time
-
64
-
ns
td(off)
turn-off delay time
-
89
-
ns
tf
fall time
-
71
-
ns
LD
internal drain
inductance
from contact screw on mounting base to
centre of die
-3.5
-nH
from upper edge of drain mounting base
to centre of die
-2.5
-nH
from drain lead 6 mm from package to
centre of die
-4.5
-nH
LS
internal source
inductance
from source lead to source bonding
pad
-7.5
-nH
Source-drain diode
VSD
source-drain voltage
IS =25A; VGS =0V; Tj =25°C;
see Figure 16
-
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = -100 A/µs; VGS =0V;
VDS =30V
-70
-
ns
Qr
recovered charge
-
58
-
nC


Número de pieza similar - BUK763R4-30B_15

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Nexperia B.V. All right...
BUK763R4-30B NEXPERIA-BUK763R4-30B Datasheet
832Kb / 14P
   N-channel TrenchMOS standard level FET
More results

Descripción similar - BUK763R4-30B_15

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
NXP Semiconductors
BUK7675-55A PHILIPS-BUK7675-55A_15 Datasheet
272Kb / 12P
   N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET
25 August 2014
PHP34NQ11T PHILIPS-PHP34NQ11T Datasheet
91Kb / 12P
   N-channel TrenchMOS??standard level FET
Rev. 01-17 May 2004
BUK7C06-40AITE PHILIPS-BUK7C06-40AITE Datasheet
109Kb / 14P
   N-channel TrenchMOS standard level FET
Rev. 04-23 June 2005
PH20100S NXP-PH20100S Datasheet
183Kb / 12P
   N-channel TrenchMOS standard level FET
Rev. 03-2 February 2009
PHB29N08T NXP-PHB29N08T Datasheet
189Kb / 12P
   N-channel TrenchMOS standard level FET
Rev. 03-13 October 2009
PHB47NQ10T NXP-PHB47NQ10T Datasheet
205Kb / 13P
   N-channel TrenchMOS standard level FET
Rev. 02-25 February 2010
PHB119NQ06T NXP-PHB119NQ06T Datasheet
191Kb / 13P
   N-channel TrenchMOS standard level FET
Rev. 02-15 April 2010
PHD20N06T NXP-PHD20N06T Datasheet
379Kb / 12P
   N-channel TrenchMOS standard level FET
Rev. 02-1 December 2009
PMZ350XN NXP-PMZ350XN Datasheet
91Kb / 13P
   N-channel TrenchMOS standard level FET
Rev. 01-21 February 2008
PHP23NQ11T NXP-PHP23NQ11T Datasheet
220Kb / 13P
   N-channel TrenchMOS standard level FET
Rev. 02-25 February 2010
PHP3055E NXP-PHP3055E Datasheet
248Kb / 14P
   N-channel TrenchMOS standard level FET
Rev. 07-26 February 2010
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com