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BUK664R8-75C Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK664R8-75C Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 14 page BUK664R8-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 17 November 2010 4 of 14 NXP Semiconductors BUK664R8-75C N-channel TrenchMOS FET Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aac794 0 40 80 120 160 0 50 100 150 200 Tmb ( °C) ID (A) (1) Tmb (°C) 0 200 150 50 100 03aa16 40 80 120 Pder (%) 0 003aae426 10 -1 1 10 10 2 10 3 10 4 10 -1 1 10 10 2 10 3 V DS (V) ID (A) Limit RDSon = VDS / ID DC 100 μs 10 ms tp =10 μs 100 ms 1 ms |
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Descripción similar - BUK664R8-75C_15 |
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