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BUK662R5-30C Datasheet(PDF) 9 Page - NXP Semiconductors |
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BUK662R5-30C Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page BUK662R5-30C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 14 October 2010 9 of 14 NXP Semiconductors BUK662R5-30C N-channel TrenchMOS intermediate level FET Tj = 25°C and ID = 25 A Fig 13. Gate charge waveform definitions Fig 14. Gate-source voltage as a function of gate charge; typical values VGS = 0 V; f = 1 MHz VGS = 0 V Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) 003aae537 0 2 4 6 8 10 0 30 60 90 120 QG (nC) VGS (V) VDS = 24 V VDS = 14 V 003aae538 102 103 104 10−2 10−1 1 10 102 VDS (V) C (pF) Ciss Crss Coss 003aae540 0 30 60 90 120 150 0 0.3 0.6 0.9 1.2 VSD (V) IS (A) Tj = 25 °C Tj = 175 °C |
Número de pieza similar - BUK662R5-30C_15 |
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Descripción similar - BUK662R5-30C_15 |
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