BUK7524_7624_55A_15 datasheet(6/15 Pages) PHILIPS

No. de pieza	BUK7524_7624_55A

Descripción Electrónicos	TrenchMOS standard level FET

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Philips Semiconductors

BUK7524-55A; BUK7624-55A

TrenchMOS™ standard level FET

Product speciﬁcation

Rev. 02 — 01 March 2001

6 of 15

9397 750 08029

Source-drain diode

VSD

source-drain (diode forward)

voltage

IS = 25 A; VGS =0V;

Figure 15

−

0.85

1.2

V

trr

reverse recovery time

IS =20A; dIS/dt = −100 A/µs

VGS = −10 V; VDS =30V

−

49

−

ns

Qr

recovered charge

−

102

−

nC

Table 5:

Characteristics…continued

Tj =25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Tj =25 °C; tp = 300 µsTj =25 °C; ID =25A

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Drain-source on-state resistance as a function

of gate-source voltage; typical values.

Tj =25 °C

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03nb71

0

20

40

60

80

100

120

140

160

180

024

68

10

VDS (V)

ID

(A)

4.5

5.5

6.5

20

7.5

8.5

9.5

11

18

16

14

12

VGS (V)=

03nb70

10

15

20

25

30

35

6

8

10

12

14

16

18

20

VGS (V)

RDSon

(m

Ω)

03nb72

0

10

20

30

40

50

60

0

20

40

60

80

100

120

140

ID (A)

RDSon

(m

Ω)

VGS (V) =

5.5

6

6.5

7

8

10

03aa28

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-60

-20

20

60

100

140

180

T

j

(

o

C)

a

R

DSon

R

DSon 25 C

°

()

----------------------------

=

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