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BUK7507-30B Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK7507-30B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUK7507-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 22 February 2011 6 of 14 NXP Semiconductors BUK7507-30B N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V; Tj = 25 °C 30 --V ID = 0.25 mA; VGS =0V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj = 175 °C; see Figure 10 1 --V ID =1mA; VDS =VGS; Tj =25°C; see Figure 10 234V ID =1mA; VDS =VGS; Tj =-55 °C; see Figure 10 --4.4 V IDSS drain leakage current VDS =30V; VGS =0V; Tj = 175 °C - - 500 µA VDS =30V; VGS =0V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VGS =20V; VDS =0V; Tj = 25 °C - 2 100 nA VGS =-20 V; VDS =0V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25 A; Tj = 175 °C; see Figure 11; see Figure 12 - - 13.3 m Ω VGS =10V; ID =25 A; Tj =25°C; see Figure 11; see Figure 12 -5.9 7 m Ω Dynamic characteristics QG(tot) total gate charge ID =25 A; VDS =24V; VGS =10V; Tj =25°C; see Figure 13 -36 - nC QGS gate-source charge - 9 - nC QGD gate-drain charge - 12 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 14 - 1820 2427 pF Coss output capacitance - 632 758 pF Crss reverse transfer capacitance - 256 351 pF td(on) turn-on delay time VDS =25V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω; Tj =25°C -20 - ns tr rise time - 51 - ns td(off) turn-off delay time - 51 - ns tf fall time - 44 - ns LD internal drain inductance from drain lead 6 mm from package to centre of die ; Tj =25°C -4.5 -nH from contact screw on mounting base to centre of die ; Tj =25°C -3.5 -nH LS internal source inductance from source lead 6 mm from package to source bond pad ; Tj =25°C -7.5 -nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0 V; Tj =25°C; see Figure 15 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =20V; Tj =25°C -46 - ns Qr recovered charge - 28 - nC |
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Descripción similar - BUK7507-30B_15 |
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