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TPA2015D1 Datasheet(PDF) 2 Page - Texas Instruments |
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TPA2015D1 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 26 page IN- VBAT IN+ PVDD AGND OUT- OUT+ GAIN Oscillator Boost Converter Battery Monitor + – PWM H- Bridge GND PVDD PVOUT GND Bias & Control END ENB SW Gain Select: +20 dB +15.5 dB +6 dB AGC AGC PVDD OUT+ OUT- GND GND GND VBAT ENB SW AGC END IN- PVOUT GND IN+ GAIN D4 C4 B4 A4 D3 C3 B3 A3 D2 B2 A2 C2 D1 C1 B1 A1 WCSP (YZH)PACKAGE (TOP VIEW) SymbolSide TPA2015D1 SLOS638A – NOVEMBER 2011 – REVISED NOVEMBER 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. FUNCTIONAL BLOCK DIAGRAM DEVICE PINOUT 2 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): TPA2015D1 |
Número de pieza similar - TPA2015D1_15 |
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Descripción similar - TPA2015D1_15 |
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