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TC1185 Datasheet(PDF) 3 Page - Microchip Technology |
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TC1185 Datasheet(HTML) 3 Page - Microchip Technology |
3 / 20 page © 2002 Microchip Technology Inc. DS21335B-page 3 TC1014/TC1015/TC1185 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Voltage......................................................... 6.5V Output Voltage ...........................(-0.3V) to (VIN +0.3V) Power Dissipation ............... Internally Limited (Note 7) Maximum Voltage on Any Pin .........VIN +0.3V to -0.3V Operating Temperature Range ......-40°C < TJ < 125°C Storage Temperature ......................... -65°C to +150°C Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS Electrical Characteristics: VIN =VR +1V, IL = 100µA, CL =3.3µF, SHDN >VIH,TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol Parameter Min Typ Max Units Device Test Conditions VIN Input Operating Voltage 2.7 — 6.0 V Note 1 IOUTMAX Maximum Output Current 50 100 150 — — — — — — mA TC1014 TC1015 TC1185 VOUT Output Voltage VR –2.5% VR ±0.5% VR +2.5% V Note 2 TCVOUT VOUT Temperature Coefficient — — 20 40 — — ppm/°C Note 3 ∆VOUT/∆VIN Line Regulation — 0.05 0.35 %(VR +1V) ≤ VIN ≤ 6V ∆VOUT/VOUT Load Regulation — — 0.5 0.5 2 3 % TC1014; TC1015 TC1185 IL = 0.1mA to IOUTMAX IL = 0.1mA to IOUTMAX (Note 4) VIN-VOUT Dropout Voltage — — — — — 2 65 85 180 270 — — 120 250 400 mV TC1015; TC1185 TC1185 IL = 100µA IL = 20mA IL = 50mA IL = 100mA IL = 150mA (Note 5) IIN Supply Current (Note 8) — 50 80 µASHDN =VIH,IL =0 IINSD Shutdown Supply Current — 0.05 0.5 µASHDN =0V PSRR Power Supply Rejection Ratio —64 — dB FRE ≤ 1kHz IOUTSC Output Short Circuit Current — 300 450 mA VOUT =0V ∆VOUT/∆PD Thermal Regulation — 0.04 — V/W Notes 6, 7 TSD Thermal Shutdown Die Temperature — 160 — °C ∆TSD Thermal Shutdown Hysteresis —10 — °C eN Output Noise — 600 — nV/ √Hz IL =IOUTMAX, F = 10kHz 470pF from Bypass to GND Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR +VDROPOUT. 2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. 3: 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA,TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. 8: Apply for Junction Temperatures of -40°C to +85°C. TC VOUT =(VOUTMAX –VOUTMIN)x 10 6 VOUT x ∆T |
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