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TC1188 Datasheet(PDF) 7 Page - Microchip Technology

No. de pieza TC1188
Descripción Electrónicos  MAX8863/64 Pin Compatible, Low Dropout, 120 mA Linear Regulators
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC1188 Datasheet(HTML) 7 Page - Microchip Technology

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 2002 Microchip Technology Inc.
DS21364B-page 7
TC1188/TC1189
FIGURE 3-2:
Functional Block Diagram.
3.4
Shutdown
The SHDN input is used to turn off the LDO P-Channel
pass MOSFET and internal bias. When shutdown, the
typical quiescent current consumed by the LDO is
0.1 nA. A logic low (< 0.4V) at the SHDN input will
cause the device to operate in the shutdown mode. A
logic high (> 2.0V) at the SHDN input will cause the
device to operate in the normal mode.
3.5
Current Limit
The LDO output current is monitored internal to the
TC1188/TC1189. The internal current sense will limit
the LDO output current to a typical value of 280 mA.
The current limit can range from approximately 50 mA
to 410 mA from device to device. The internal current
limit protects the device from a continuous output short
circuit.
3.6
Thermal Overload Protection
Integrated thermal protection circuitry shuts the
TC1188/TC1189 off when the internal die temperature
exceeds approximately 170°C. The regulator output
remains off until the internal die temperature drops to
approximately 150°C.
3.7
Operating Region and Power
Dissipation
The internal power dissipation to the LDO is primarily
determined by the input voltage, output voltage and
output current. The following equation is used to
approximate the worst case for power dissipation:
EQUATION
The maximum power dissipation is a function of the
maximum ambient temperature, TA(MAX), the maximum
junction temperature, TJ(MAX), and the package thermal
resistance from junction to air,
θJA. The 5-Pin SOT23A
package has a
θJA of approximately 220°C/Watt.
EQUATION
Bandgap
Reference
MOS Driver
With ILIMIT
Thermal
Sensor
Shutdown
Logic
Error
+
VIN
SHDN
GND
VOUT
PMOS Pass
GND
N
(TC1189 Only)
Amplifier
Transistor
PD = VIN(MAX) - VOUT(MIN) x ILOAD(MAX)
Where:
P
D = Worst case internal power dissipation.
V
IN
(MAX) = Maximum input voltage.
V
OUT
(MIN) = Minimum output voltage.
I
LOAD
(MAX) = Maximum output current.
PD = (TJ(MAX) - TA(MAX))/θJA
Where all terms are previously defined.


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