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6N10G-TN3-R Datasheet(PDF) 4 Page - Unisonic Technologies

No. de pieza 6N10G-TN3-R
Descripción Electrónicos  N-CHANNEL POWER MOSFET
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N10G-TN3-R Datasheet(HTML) 4 Page - Unisonic Technologies

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6N10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 4
www.unisonic.com.tw
QW-R502-486.E
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain-Source Breakdown Voltage, BVDSS (V)
0
Drain Current vs. Gate Threshold Voltage
Gate Threshold Voltage, VTH (V)
1.5
2.5
0.5
2
0
50
100
150
200
250
300
020
80
120
60
0
50
100
150
200
250
300
40
100
1
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.


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