3N70KG-TF1-T datasheet(2/6 Pages) UTC

No. de pieza	3N70KG-TF1-T

Descripción Electrónicos	N-CHANNEL JUNCTIN SILICON FET

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Fabricante Electrónico	UTC [Unisonic Technologies]

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2 / 6 page

3N70K-MK

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R205-012.a



ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 2)

IAR

3.0

A

Continuous Drain Current

ID

3.0

A

Pulsed Drain Current (Note 2)

IDM

12

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

60

mJ

Repetitive (Note 2)

EAR

7.5

mJ

Power Dissipation

PD

34

W

Derate above 25°C

0.27

W/°C

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Junction Temperature

TJ

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 13.33mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤3.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°С/W

Junction to Case

θJC

3.7

°С/W

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