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3N65KG-TMS-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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3N65KG-TMS-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 7 page 3N65K-MK Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R205-009.b ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 650 V Drain-Source Leakage Current IDSS VDS = 650 V, VGS = 0 V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 30 V, VDS = 0 V 100 nA Reverse VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.6 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.5 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 1.5A 4.0 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz 388 500 pF Output Capacitance COSS 41 65 pF Reverse Transfer Capacitance CRSS 5.1 11 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, ID = 0.5A, RG = 25Ω (Note 1, 2) 43 ns Turn-On Rise Time tR 20 ns Turn-Off Delay Time tD(OFF) 94 ns Turn-Off Fall Time tF 22 ns Total Gate Charge QG VDS= 50V,ID= 1.3A, VGS= 10 V (Note 1, 2) 14 16 nC Gate-Source Charge QGS 4.2 nC Gate-Drain Charge QDD 1.6 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 3.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 12 A Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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