SI1422DH datasheet(4/12 Pages) TFUNK

No. de pieza	SI1422DH

Descripción Electrónicos	N-Channel 12 V (D-S) MOSFET

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Document Number: 66701

S10-1287-Rev. A, 31-May-10

Vishay Siliconix

Si1422DH

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Soure-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

TJ = 25 °C

TJ = 150 °C

0.2

0.3

0.4

0.5

0.6

0.7

0.8

- 50

- 25

0

25

50

75

100

125

150

ID = 250 μA

TJ - Temperature(°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0

0.01

0.02

0.03

0.04

0.05

0.06

01

2

3

45

TJ =25 °C

ID =5.1 A

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

0

5

10

15

20

25

30

Time (s)

10

1000

0.1

0.01

0.001

100

1

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

1s,10s

Limited by RDS(on)*

BVDSS Limited

1ms

100 μs

10 ms

DC

100 ms

VDS - Drain-to-Source Voltage (V)

*V GS > minimum VGS at which RDS(on) is specified

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