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SI2342DS Datasheet(PDF) 2 Page - Vishay Telefunken

No. de pieza SI2342DS
Descripción Electrónicos  N-Channel 8 V (D-S) MOSFET
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Fabricante Electrónico  TFUNK [Vishay Telefunken]
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Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
Vishay Siliconix
Si2342DS
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
8V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
10
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 2.5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
0.35
0.8
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 8 V, VGS = 0 V
1
µA
VDS = 8 V, VGS = 0 V, TJ = 70 °C
10
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS 4.5 V, ID = 7.2 A
0.014
0.017
VGS 2.5 V, ID = 6.7 A
0.016
0.020
VGS = 1.8 V, ID = 6.4 A
0.018
0.022
VGS = 1.5 V, ID = 5.5 A
0.020
0.030
VGS = 1.2 V, ID = 1.3 A
0.025
0.075
Forward Transconductancea
gfs
VDS = 4 V, ID = 7.2 A
75
S
Dynamicb
Input Capacitance
Ciss
VDS = 4 V, VGS = 0 V, f = 1 MHz
1070
pF
Output Capacitance
Coss
385
Reverse Transfer Capacitance
Crss
200
Total Gate Charge
Qg
VDS = 4 V, VGS = 4.5 V, ID = 7.2 A
10.5
15.8
nC
VDS = 4 V, VGS = 2.5 V, ID = 7.2 A
69
Gate-Source Charge
Qgs
1.6
Gate-Drain Charge
Qgd
1
Gate Resistance
Rg
f = 1 MHz
2.4
12
24
Turn-On Delay Time
td(on)
VDD = 4 V, RL = 0.7 
ID  5.8 A, VGEN = 4.5 V, Rg = 1 
612
ns
Rise Time
tr
14
20
Turn-Off Delay Time
td(off)
65
98
Fall Time
tf
25
38
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
2.1
A
Pulse Diode Forward Current
ISM
30
Body Diode Voltage
VSD
IS = 5.8 A, VGS 0
0.82
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 5.8 A, dI/dt = 100 A/µs, TJ = 25 °C
40
60
ns
Body Diode Reverse Recovery Charge
Qrr
17
26
nC
Reverse Recovery Fall Time
ta
15
ns
Reverse Recovery Rise Time
tb
25


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