Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

SI4866BD Datasheet(PDF) 2 Page - Vishay Telefunken

No. de pieza SI4866BD
Descripción Electrónicos  N-Channel 12-V (D-S) MOSFET
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  TFUNK [Vishay Telefunken]
Página de inicio  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

SI4866BD Datasheet(HTML) 2 Page - Vishay Telefunken

  SI4866BD Datasheet HTML 1Page - Vishay Telefunken SI4866BD Datasheet HTML 2Page - Vishay Telefunken SI4866BD Datasheet HTML 3Page - Vishay Telefunken SI4866BD Datasheet HTML 4Page - Vishay Telefunken SI4866BD Datasheet HTML 5Page - Vishay Telefunken SI4866BD Datasheet HTML 6Page - Vishay Telefunken SI4866BD Datasheet HTML 7Page - Vishay Telefunken SI4866BD Datasheet HTML 8Page - Vishay Telefunken SI4866BD Datasheet HTML 9Page - Vishay Telefunken Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
www.vishay.com
2
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
Vishay Siliconix
Si4866BDY
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
12
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
12
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 3.5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.4
1.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 12 V, VGS = 0 V
1
µA
VDS = 12 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 12 A
0.0042
0.0053
Ω
VGS = 2.5 V, ID = 10 A
0.0048
0.0060
VGS = 1.8 V, ID = 8 A
0.006
0.0074
Forward Transconductancea
gfs
VDS = 15 V, ID = 12 A
80
S
Dynamicb
Input Capacitance
Ciss
VDS = 6 V, VGS = 0 V, f = 1 MHz
5020
pF
Output Capacitance
Coss
1305
Reverse Transfer Capacitance
Crss
805
Total Gate Charge
Qg
VDS = 6 V, VGS = 4.5 V, ID = 10 A
52
80
nC
VDS = 6 V, VGS = 2.5 V, ID = 10 A
29.5
45
Gate-Source Charge
Qgs
6.2
Gate-Drain Charge
Qgd
8.9
Gate Resistance
Rg
f = 1 MHz
0.8
1.3
Ω
Turn-On Delay Time
td(on)
VDD = 6 V, RL = 1.2 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
26
40
ns
Rise Time
tr
18
30
Turn-Off Delay Time
td(off)
85
130
Fall Time
tf
32
50
Turn-On Delay Time
td(on)
VDD = 6 V, RL = 1.2 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
13
25
Rise Time
tr
12
24
Turn-Off Delay Time
td(off)
57
90
Fall Time
tf
918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
4
A
Pulse Diode Forward Currenta
ISM
50
Body Diode Voltage
VSD
IS = 2.3 A
0.62
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 9.5 A, dI/dt = 100 A/µs, TJ = 25 °C
50
80
ns
Body Diode Reverse Recovery Charge
Qrr
35
55
nC
Reverse Recovery Fall Time
ta
19
ns
Reverse Recovery Rise Time
tb
31


Número de pieza similar - SI4866BD

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI4866BDY VISHAY-SI4866BDY Datasheet
238Kb / 10P
   N-Channel 12-V (D-S) MOSFET
Rev. B, 06-Apr-09
SI4866BDY-T1-E3 VISHAY-SI4866BDY-T1-E3 Datasheet
238Kb / 10P
   N-Channel 12-V (D-S) MOSFET
Rev. B, 06-Apr-09
SI4866BDY-T1-GE3 VISHAY-SI4866BDY-T1-GE3 Datasheet
238Kb / 10P
   N-Channel 12-V (D-S) MOSFET
Rev. B, 06-Apr-09
More results

Descripción similar - SI4866BD

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI7104DN VISHAY-SI7104DN Datasheet
542Kb / 14P
   N-Channel 12-V (D-S) MOSFET
Rev. B, 17-Mar-08
SI7858BDP VISHAY-SI7858BDP Datasheet
515Kb / 13P
   N-Channel 12 V (D-S) MOSFET
Rev. A, 03-May-10
SIR492DP VISHAY-SIR492DP Datasheet
482Kb / 14P
   N-Channel 12-V (D-S) MOSFET
Rev. B, 22-Sep-08
SI7102DN VISHAY-SI7102DN Datasheet
581Kb / 14P
   N-Channel 12-V (D-S) MOSFET
Rev. B, 22-Dec-08
logo
Vishay Telefunken
SIS452DN TFUNK-SIS452DN Datasheet
568Kb / 13P
   N-Channel 12-V (D-S) MOSFET
logo
Vishay Siliconix
SI4838BDY VISHAY-SI4838BDY_V01 Datasheet
919Kb / 9P
   N-Channel 12 V (D-S) MOSFET
01-Jan-2022
SI7104DN VISHAY-SI7104DN_V01 Datasheet
541Kb / 14P
   N-Channel 12-V (D-S) MOSFET
01-Jan-2022
logo
Vishay Telefunken
SIB404DK TFUNK-SIB404DK Datasheet
195Kb / 9P
   N-Channel 12 V (D-S) MOSFET
logo
Vishay Siliconix
SIUD412ED VISHAY-SIUD412ED Datasheet
185Kb / 7P
   N-Channel 12 V (D-S) MOSFET
Rev. A, 08-Aug-16
SI7858ADP VISHAY-SI7858ADP Datasheet
318Kb / 12P
   N-Channel 12-V (D-S) MOSFET
Rev. C, 03-Mar-08
SI7858BDP VISHAY-SI7858BDP_17 Datasheet
349Kb / 13P
   N-Channel 12 V (D-S) MOSFET
Rev. A, 03-May-10
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com