Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

SI6968BE Datasheet(PDF) 9 Page - Vishay Telefunken

No. de pieza SI6968BE
Descripción Electrónicos  Dual N-Channel 2.5-V (G-S) MOSFET
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  TFUNK [Vishay Telefunken]
Página de inicio  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

SI6968BE Datasheet(HTML) 9 Page - Vishay Telefunken

Back Button SI6968BE Datasheet HTML 3Page - Vishay Telefunken SI6968BE Datasheet HTML 4Page - Vishay Telefunken SI6968BE Datasheet HTML 5Page - Vishay Telefunken SI6968BE Datasheet HTML 6Page - Vishay Telefunken SI6968BE Datasheet HTML 7Page - Vishay Telefunken SI6968BE Datasheet HTML 8Page - Vishay Telefunken SI6968BE Datasheet HTML 9Page - Vishay Telefunken SI6968BE Datasheet HTML 10Page - Vishay Telefunken SI6968BE Datasheet HTML 11Page - Vishay Telefunken  
Zoom Inzoom in Zoom Outzoom out
 9 / 11 page
background image
AN806
Vishay Siliconix
Document Number: 70738
17-Dec-03
www.vishay.com
1
Mounting LITTLE FOOTR TSSOP-8 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFET, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT TSSOP-8 power MOSFET
package footprint. In converting the footprint to the pad set for a
power device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
In the case of the TSSOP-8 package, the thermal connections
are very simple. Pins 1, 5, and 8 are the drain of the MOSFET
for a single MOSFET package and are connected together. In
the dual package, pins 1 and 8 are the two drains. For a
small-signal device or integrated circuit, typical connections
would be made with traces that are 0.020 inches wide. Since
the drain pins also provide the thermal connection to the
package, this level of connection is inadequate. The total
cross section of the copper may be adequate to carry the
current required for the application, but it presents a large
thermal impedance. Also, heat spreads in a circular fashion
from the heat source. In this case the drain pins are the heat
sources when looking at heat spread on the PC board.
FIGURE 1. Single MOSFET TSSOP-8 Pad
Pattern with Copper Spreading
0.032
0.8
0.018
0.45
0.284
7.6
0.073
1.78
0.118
3.54
0.026
0.66
0.122
3.1
The pad patterns with copper spreading for the single-MOSFET
TSSOP-8 (Figure 1) and dual-MOSFET TSSOP-8 (Figure 2)
show the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of copper
overlies the drain pins. The copper plane connects the drain pins
electrically, but more importantly provides planar copper to draw
heat from the drain leads and start the process of spreading the
heat so it can be dissipated into the ambient air. These patterns
use all the available area underneath the body for this purpose.
FIGURE 2. Dual MOSFET TSSOP-8 Pad Pattern with
Copper Spreading
0.026
0.66
0.284
7.6
0.032
0.8
0.122
3.1
0.091
1.65
0.073
1.78
0.018
0.45
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low impedance
path for heat to move away from the device.


Número de pieza similar - SI6968BE

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI6968BEDQ VISHAY-SI6968BEDQ Datasheet
53Kb / 5P
   Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
Rev. A, 30-Jun-03
SI6968BEDQ VISHAY-SI6968BEDQ Datasheet
224Kb / 11P
   Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
Rev. C, 02-Jun-08
SI6968BEDQ VISHAY-SI6968BEDQ Datasheet
256Kb / 11P
   Dual N-Channel 2.5 V (G-S) MOSFET Common Drain, ESD Protection
01-Jan-2022
SI6968BEDQ-T1 VISHAY-SI6968BEDQ-T1 Datasheet
53Kb / 5P
   Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
Rev. A, 30-Jun-03
SI6968BEDQ-T1 VISHAY-SI6968BEDQ-T1 Datasheet
224Kb / 11P
   Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
Rev. C, 02-Jun-08
More results

Descripción similar - SI6968BE

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
72413 VISHAY-72413 Datasheet
182Kb / 3P
   Dual N-Channel 2.5-V (G-S) MOSFET
01-Jun-04
SI6925ADQ VISHAY-SI6925ADQ Datasheet
175Kb / 3P
   Dual N-Channel 2.5-V (G-S) MOSFET
23-May-04
logo
Guangdong Kexin Industr...
KI5904DC KEXIN-KI5904DC Datasheet
66Kb / 2P
   Dual N-Channel 2.5-V (G-S) MOSFET
logo
Vishay Siliconix
SI6946DQ VISHAY-SI6946DQ Datasheet
50Kb / 4P
   Dual N-Channel 2.5-V (G-S) MOSFET
Rev. E, 06-Oct-97
logo
Vishay Telefunken
SI6926ADQ TFUNK-SI6926ADQ Datasheet
227Kb / 11P
   Dual N-Channel 2.5-V (G-S) MOSFET
logo
Vishay Siliconix
SI5904DC VISHAY-SI5904DC_08 Datasheet
94Kb / 5P
   Dual N-Channel 2.5-V (G-S) MOSFET
Rev. C, 18-Apr-05
SI9925DY VISHAY-SI9925DY Datasheet
41Kb / 4P
   Dual N-Channel 2.5-V (G-S) MOSFET
Rev. N, 26-May-03
SI6926ADQ VISHAY-SI6926ADQ_05 Datasheet
100Kb / 6P
   Dual N-Channel 2.5-V (G-S) MOSFET
Rev. A, 16-Feb-04
SI5904DC VISHAY-SI5904DC_10 Datasheet
224Kb / 9P
   Dual N-Channel 2.5 V (G-S) MOSFET
Rev. D, 08-Mar-10
SI6926ADQ VISHAY-SI6926ADQ_08 Datasheet
222Kb / 11P
   Dual N-Channel 2.5-V (G-S) MOSFET
Rev. B, 12-May-08
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com