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SIA527DJ Datasheet(PDF) 3 Page - Vishay Telefunken

No. de pieza SIA527DJ
Descripción Electrónicos  N- and P-Channel 12-V (D-S) MOSFET
Download  14 Pages
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Fabricante Electrónico  TFUNK [Vishay Telefunken]
Página de inicio  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

SIA527DJ Datasheet(HTML) 3 Page - Vishay Telefunken

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Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
3
Vishay Siliconix
SiA527DJ
Document Number: 64162
S13-1669-Rev. A, 29-Jul-13
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
 300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamica
Turn-On Delay Time
td(on)
N-Channel
VDD = 6 V, RL = 1.2 
ID  5.2 A, VGEN = 4.5 V, Rg = 1 
P-Channel
VDD = - 6 V, RL = 1.3 
ID  - 4.5 A, VGEN = - 4.5 V, Rg = 1 
N-Ch
10
15
ns
P-Ch
22
35
Rise Time
tr
N-Ch
10
15
P-Ch
22
35
Turn-Off Delay Time
td(off)
N-Ch
22
30
P-Ch
32
50
Fall Time
tf
N-Ch
10
15
P-Ch
15
25
Turn-On Delay Time
td(on)
N-Channel
VDD = 6 V, RL = 1.2 
ID  5.2 A, VGEN = 8 V, Rg = 1 
P-Channel
VDD = - 6 V, RL = 1.3 
ID  - 4.5 A, VGEN = - 8 V, Rg = 1 
N-Ch
5
10
P-Ch
10
15
Rise Time
tr
N-Ch
10
15
P-Ch
10
15
Turn-Off Delay Time
td(off)
N-Ch
18
30
P-Ch
30
40
Fall Time
tf
N-Ch
10
15
P-Ch
12
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
N-Ch
4.5
A
P-Ch
- 4.5
Pulse Diode Forward Current (t = 100 µs)
ISM
N-Ch
20
P-Ch
- 15
Body Diode Voltage
VSD
IS = 5.2 A, VGS = 0 V
N-Ch
0.85
1.2
V
IS = - 4.5 A, VGS = 0 V
P-Ch
- 0.87
- 1.2
Body Diode Reverse Recovery Time
trr
N-Channel
IF = 5.2 A, dI//dt = 100 A/µs, TJ = 25 °C
P-Channel
IF = - 4.5 A, dI/dt = - 100 A/µs, TJ = 25 °C
N-Ch
20
40
ns
P-Ch
30
60
Body Diode Reverse Recovery Charge
Qrr
N-Ch
5
10
nC
P-Ch
15
30
Reverse Recovery Fall Time
ta
N-Ch
8
ns
P-Ch
15
Reverse Recovery Rise Time
tb
N-Ch
12
P-Ch
15


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