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SIA910EDJ Datasheet(PDF) 1 Page - Vishay Telefunken |
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SIA910EDJ Datasheet(HTML) 1 Page - Vishay Telefunken |
1 / 9 page Vishay Siliconix SiA910EDJ Document Number: 65535 S13-0460-Rev. B, 04-Mar-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Dual N-Channel 12 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection: 2400 V • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch for Portable Applications • High Frequency DC/DC Converter • DC/DC Converter Notes: a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile ( www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a Qg (Typ.) 12 0.028 at VGS = 4.5 V 4.5 6.2 nC 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 S1 D1 G2 S2 G1 D2 1 6 5 4 2 3 2.05 mm 2.05 mm PowerPAK SC-70-6 Dual D1 D2 Ordering Information: SiA910EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code X X X C F X Lot Traceability and Date code Part # code N-Channel MOSFET N-Channel MOSFET S 2 D 2 G 2 S 1 D 1 G 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.5a A TC = 70 °C 4.5a TA = 25 °C 4.5a, b, c TA = 70 °C 4.5a, b, c Pulsed Drain Current IDM 20 Continuous Source-Drain Diode Current TC = 25 °C IS 4.5a TA = 25 °C 1.6b, c Maximum Power Dissipation TC = 25 °C PD 7.8 W TC = 70 °C 5 TA = 25 °C 1.9b, c TA = 70 °C 1.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 5 s RthJA 52 65 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 12.5 16 |
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