Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
TPS43350-Q1 Datasheet(PDF) 2 Page - Texas Instruments |
|
TPS43350-Q1 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 33 page TPS43350-Q1 TPS43351-Q1 SLVSAR7D – JUNE 2011 – REVISED APRIL 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. PACKAGE AND ORDERING INFORMATION For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. ABSOLUTE MAXIMUM RATINGS (1) MIN MAX UNIT Voltage Input voltage: VBAT –0.3 60 V Ground: PGNDA–AGND, PGNDB–AGND –0.3 0.3 V Enable inputs: ENA, ENB –0.3 60 V Bootstrap inputs: CBA, CBB –0.3 68 V Bootstrap inputs: CBA–PHA, CBB–PHB –0.3 8.8 V Phase inputs: PHA, PHB –0.7 60 V Phase inputs: PHA, PHB (for 150 ns) –1 V Feedback inputs: FBA, FBB –0.3 13 V Voltage Error amplifier outputs: COMPA, COMPB –0.3 13 V (Buck function: High-side MOSFET driver: GA1–PHA, GB1–PHB –0.3 8.8 V BuckA and BuckB) Low-side MOSFET drivers: GA2–PGNDA, GB2–PGNDB –0.3 8.8 V Current-sense voltage: SA1, SA2, SB1, SB2 –0.3 13 V Soft start: SSA, SSB –0.3 13 V Power-good output: PGA, PGB –0.3 13 V Power-good delay: DLYAB –0.3 13 V Switching-frequency timing resistor: RT –0.3 13 V SYNC, EXTSUP –0.3 13 V P-channel MOSFET driver: GC2 –0.3 60 V Voltage (PMOS driver) P-channel MOSFET driver: -GC2 –0.3 8.8 V Gate-driver supply: VREG –0.3 8.8 V Junction temperature: TJ –40 150 °C Temperature Operating temperature: TA –40 125 °C Storage temperature: Tstg –55 165 °C Human-body model (HBM) AEC- ±2 kV Q100 Classification Level H2 FBA, FBB, RT, DLYAB ±400 Charged-device model (CDM) Electrostatic VBAT, SYNC, ±750 AEC-Q100 Classification Level C2 discharge ratings All other pins ±500 V PGA, PGB ±150 Machine model (MM) All other pins ±200 (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to AGND, unless otherwise stated. 2 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TPS43350-Q1 TPS43351-Q1 |
Número de pieza similar - TPS43350-Q1_15 |
|
Descripción similar - TPS43350-Q1_15 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |