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SIB410DK Datasheet(PDF) 1 Page - Vishay Telefunken

No. de pieza SIB410DK
Descripción Electrónicos  N-Channel 30 V (D-S) MOSFET
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Fabricante Electrónico  TFUNK [Vishay Telefunken]
Página de inicio  http://www.vishay.com
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SIB410DK Datasheet(HTML) 1 Page - Vishay Telefunken

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Vishay Siliconix
SiB410DK
Document Number: 67020
S13-0630-Rev. B, 25-Mar-13
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-Channel 30 V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
•100 % Rg Tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
DC/DC Converters
Boost Converters
Notes:
a. Package limited, TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
a
Qg (Typ.)
30
0.042 at VGS = 4.5 V
9
5.7 nC
0.046 at VGS = 2.5 V
9
0.052 at VGS = 1.8 V
9
PowerPAK SC-75-6L-Single
6
5
4
1
2
3
D
D
D
D
G
S
S
1.60 mm
1.60 mm
Ordering Information:
SiB410DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
X X X
A H X
Lot Traceability
and Date code
Part # code
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
9a
A
TC = 70 °C
9a
TA = 25 °C
5.9b, c
TA = 70 °C
4.7b, c
Pulsed Drain Current
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C
IS
9a
TA = 25 °C
2.1b, c
Maximum Power Dissipation
TC = 25 °C
PD
13
W
TC = 70 °C
8.4
TA = 25 °C
2.5b, c
TA = 70 °C
1.6b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
t
 5 s
RthJA
41
51
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
7.5
9.5


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