Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
SIZ710DT Datasheet(PDF) 2 Page - Vishay Telefunken |
|
SIZ710DT Datasheet(HTML) 2 Page - Vishay Telefunken |
2 / 14 page www.vishay.com 2 Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 Vishay Siliconix SiZ710DT This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA Ch-1 20 V VGS = 0 V, ID = 250 µA Ch-2 20 VDS Temperature Coefficient V DS/TJ ID = 250 µA Ch-1 19 mV/°C ID = 250 µA Ch-2 20 VGS(th) Temperature Coefficient V GS(th)/TJ ID = 250 µA Ch-1 - 4.8 ID = 250 µA Ch-2 - 5.3 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ch-1 1 2.2 V VDS = VGS, ID = 250 µA Ch-2 1 2.2 Gate Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Ch-1 ± 100 nA Ch-2 ± 100 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V Ch-1 1 µA VDS = 20 V, VGS = 0 V Ch-2 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-2 5 On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V Ch-1 15 A VDS 5 V, VGS = 10 V Ch-2 20 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 19 A Ch-1 0.0055 0.0068 VGS = 10 V, ID = 20 A Ch-2 0.0027 0.0033 VGS = 4.5 V, ID = 16.5 A Ch-1 0.0072 0.0090 VGS = 4.5 V, ID = 20 A Ch-2 0.0034 0.0043 Forward Transconductanceb gfs VDS = 10 V, ID = 19 A Ch-1 45 S VDS = 10 V, ID = 20 A Ch-2 85 Dynamica Input Capacitance Ciss Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz Ch-1 820 pF Ch-2 2310 Output Capacitance Coss Ch-1 290 Ch-2 730 Reverse Transfer Capacitance Crss Ch-1 115 Ch-2 305 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 19 A Ch-1 11.5 18 nC VDS = 10 V, VGS = 10 V, ID = 20 A Ch-2 38 60 Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 16.8 A Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 20 A Ch-1 6.9 11 Ch-2 18.2 28 Gate-Source Charge Qgs Ch-1 2.4 Ch-2 6.6 Gate-Drain Charge Qgd Ch-1 1.7 Ch-2 4.8 Gate Resistance Rg f = 1 MHz Ch-1 0.3 1.3 2.6 Ch-2 0.2 0.8 1.6 |
Número de pieza similar - SIZ710DT |
|
Descripción similar - SIZ710DT |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |