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SI4914BDY Datasheet(PDF) 1 Page - Vishay Telefunken

No. de pieza SI4914BDY
Descripción Electrónicos  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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SI4914BDY Datasheet(HTML) 1 Page - Vishay Telefunken

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Vishay Siliconix
Si4914BDY
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
LITTLE FOOT® Plus Integrated Schottky
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Notebook PC
- System Power dc-to-dc
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
Channel-1
30
0.021 at VGS = 10 V
8.4
6.7
0.027 at VGS = 4.5 V
7.4
Channel-2
0.020 at VGS = 10 V
8d
7.0
0.025 at VGS = 4.5 V
8d
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.50 V at 1.0 A
2.0
D1
G1
D1
S1/D2
G2
S1/D2
S2
S1/D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:Si4914BDY-T1-E3 (Lead (Pb)-free)
Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G2
S2
N-Channel 2
MOSFET
Schottky Diode
G1
N-Channel 1
MOSFET
S1/D2
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Package limited.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150 °C)
a, b
TC = 25 °C
ID
8.4
8d
A
TC = 70 °C
6.7
7.4
TA = 25 °C
6.7b, c
7.4b, c
TA = 70 °C
5.3b, c
5.7b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM
40
40
Continuous Source-Drain Diode Current
TC = 25 °C
IS
2.4
2.8
TA = 25 °C
1.0b, c
1.1b, c
PulseD Source-Drain Current
ISM
40
40
Single-Pulse Avalanche Current
L = 0.1 mH
IAS
15
Single-Pulse Avalanche Energy
EAS
11.2
mJ
Maximum Power Dissipationa, b
TC = 25 °C
PD
2.7
3.1
W
TC = 70 °C
1.7
2.0
TA = 25 °C
1.7b, c
2.0b, c
TA = 70 °C
1.1b, c
1.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C


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