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SIA462DJ Datasheet(PDF) 1 Page - Vishay Telefunken |
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SIA462DJ Datasheet(HTML) 1 Page - Vishay Telefunken |
1 / 9 page Vishay Siliconix SiA462DJ New Product Document Number: 63269 S13-0628-Rev. A, 25-Mar-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact:: pmostechsupport@vishay.com N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • DC/DC Converters and Synchronous Buck Converters - Lower Ringing Voltage from Soft Turn-On - High Efficiency from Fast Turn-Off - Lower Shoot-Through Possibility Notes: a. Based on package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a Qg (Typ.) 30 0.018 at VGS = 10 V 12 5 nC 0.020 at VGS = 6 V 12 0.022 at VGS = 4.5 V 12 Ordering Information: SiA462DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Bottom View PowerPAK SC-70-6L-Single 6 5 4 1 2 3 D D D D G S S 2.05 mm 2.05 mm Marking Code X X X A S X Lot Traceability and Date code Part # code N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 12a A TC = 70 °C 12a TA = 25 °C 12a,b, c TA = 70 °C 9.7b, c Pulsed Drain Current (t = 300 µs) IDM 40 Continuous Source-Drain Diode Current TC = 25 °C IS 12a TA = 25 °C 2.9b, c Maximum Power Dissipation TC = 25 °C PD 19 W TC = 70 °C 12 TA = 25 °C 3.5b, c TA = 70 °C 2.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 5 s RthJA 28 36 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5 |
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