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SI2308BDS Datasheet(PDF) 4 Page - Vishay Telefunken |
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SI2308BDS Datasheet(HTML) 4 Page - Vishay Telefunken |
4 / 10 page Vishay Siliconix Si2308BDS www.vishay.com 4 Document Number: 69958 S-83053-Rev. B, 29-Dec-08 New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 1 VSD -Source-to-Drain Voltage (V) TJ = 25 °C 0.1 10 1.2 1.5 1.8 2.1 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.10 0.15 0.20 0.25 0.30 0.35 345 6 7 8 910 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =1.9 A 0 10 2 4 Time (s) 1 600 10 6 0.1 0.01 100 TA = 25 °C Single Pulse 8 Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 10 0.1 0.1 1 10 1 TA = 25 °C Single Pulse 1ms 10 ms 100 ms 0.01 1s,10s DC BVDSS Limited 100 100 µs Limited byRDS(on)* |
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